Characterization of porous silicon layers by means of X-ray double-crystal diffractometry.
نویسندگان
چکیده
منابع مشابه
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
Core-level intensities for Si 2p , Si 2s , O 1s , and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect tr...
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Characterization of clarithromycin polymorph was performed by solid-state cross polarization and magic angle spinning (CP/MAS) 13C-NMR spectroscopy. Two polymorphs, form II and form I, of clarithromycins indicated characteristic resonances of C1 carbonyl carbon at 176.2 and 175.2 ppm, respectively. Since each peak of C1 carbon was well separated in the spectrum of the two polymorphs, we perform...
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Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
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ژورنال
عنوان ژورنال: ISIJ International
سال: 1989
ISSN: 0915-1559
DOI: 10.2355/isijinternational.29.223